Compound Semiconductor Engineer (GaN/SiC)

Semiconductor Mid-level (L4 equivalent) 2-5 years

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The job description

Tech stack. GaN/SiC epitaxy, HEMTs, MOCVD, power device characterization, double-pulse testing, wide-bandgap reliability, TCAD

About the role

A semiconductor manufacturer building power devices needs a compound semiconductor engineer for GaN and SiC technologies, the materials displacing silicon in every application where efficiency matters. You will develop epitaxy and device processes for high-voltage, high-frequency applications in EVs, data centers, and renewables, connecting material quality to device performance to application results. Your devices switch faster and run cooler than anything silicon can do, and your job is to make that advantage manufacturable at scale. The compound semiconductor engineer also drives the wide-bandgap reliability qualification, since dynamic on-resistance and gate stability determine whether customers trust GaN and SiC in the field.

What you will achieve

Deliver GaN HEMT or SiC MOSFET processes that hit breakdown voltage and on-resistance targets for 650V and 1200V product families, with margin demonstrated across process corners.
Drive epitaxy quality so buffer leakage and dynamic on-resistance meet datasheet limits across production lots, not just on hero wafers from development runs.
Reduce device parametric spread by 25 percent through process window optimization on gate formation and ohmic contacts, the steps that dominate wide-bandgap variability, with process windows validated across multiple epi batches and reactor configurations.
Own double-pulse and switching characterization, correlating device design choices to application-level efficiency gains that customers can measure in their systems, closing the loop from fab to field.
Cut development cycle time by 20 percent with structured split lots that link epi, process, and device results in a single learning loop, with clear owners for every split condition.

What you will bring

Must-haves

BS or MS in electrical engineering, materials science, or physics.
2 to 5 years working with GaN, SiC, or other compound semiconductor devices or processes in development or production.
Understanding of wide-bandgap device physics including polarization effects, 2DEG formation, and high-field transport.
Experience with power device characterization: breakdown, leakage, capacitance-voltage, and switching measurements.
Hands-on familiarity with MOCVD growth or compound-semiconductor fab processes, including their unique contamination and defect concerns.
Knowledge of power electronics applications such as converters, inverters, and motor drives, so device targets connect to real system requirements.

Nice-to-haves

Experience with vertical GaN or SiC device architectures and their process integration challenges.
Familiarity with gate reliability and threshold stability mechanisms in GaN HEMTs.
Background in packaging for high-power, high-temperature operation, including die attach and thermal management.