BiCMOS IC Design Engineer

Analog IC Design Engineer Mid-level (L4 equivalent) 2-5 years

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The job description

Tech stack. SiGe HBTs, bipolar-CMOS co-design, high-voltage devices, high-frequency gain stages, Cadence Virtuoso, SpectreRF, thermal design

About the role

You will join a high-performance analog company designing in BiCMOS processes where bipolar transistors do what CMOS cannot: high transconductance, low noise, and high breakdown in the same flow. The team builds precision, high-voltage, and high-frequency products that exploit both device families on one die. This role matters because choosing the right device for each function, bipolar where it wins and CMOS where it wins, is the core craft of this team and the source of its product edge. Few teams in the industry still master bipolar design, which makes this expertise increasingly rare and valuable.

What you will achieve

Ship products that exploit BiCMOS strengths: bipolar input stages, high-voltage outputs, and CMOS digital calibration on one die
Design high-gain, low-noise front ends using SiGe HBTs that outperform CMOS-only alternatives in noise and bandwidth
Cut power and area by partitioning each block optimally between bipolar and CMOS devices based on measured device data
Deliver high-voltage interfaces with proper SOA, thermal design, and protection that survive automotive and industrial abuse
Drive accurate electro-thermal simulation and layout, managing self-heating effects that bipolar power devices introduce
Own technology evaluation for new BiCMOS nodes, benchmarking HBT performance and advising the roadmap on process selection
Mentor the next generation of bipolar designers, preserving craft knowledge the industry is at risk of losing

What you will bring

Must-haves

2-5 years designing analog circuits in BiCMOS or bipolar processes with shipped products
Deep understanding of bipolar device physics: Early effect, Kirk effect, breakdown mechanisms, and thermal behavior
Design experience with bipolar building blocks: bandgaps, current mirrors, differential pairs, and output stages
Skill in partitioning designs between bipolar and CMOS devices to optimize noise, speed, voltage, and power together
Proficiency in Cadence Virtuoso and Spectre, including bipolar model nuances and temperature-dependent simulation
Familiarity with high-voltage layout: isolation structures, thermal spreading, and metal current limits
B.S. or M.S. in Electrical Engineering with an analog circuits focus

Nice-to-haves

SiGe HBT experience at RF or mmWave frequencies
Familiarity with radiation-hardened bipolar design for aerospace or defense
Prior work on precision references or amplifiers where bipolar devices set the performance bar