Epitaxy Process Engineer

About the role

A semiconductor manufacturer growing its own epitaxial layers needs an epitaxy engineer to own MOCVD or MBE processes, the crystal foundation every subsequent process step builds on. You will develop growth recipes that hit thickness, doping, and defect targets simultaneously, sustain them across reactor PMs and source changes, and match multiple reactors so production can flex without requalification. Crystal quality starts with you, and defects you allow through will haunt every downstream yield pareto. The epitaxy engineer also qualifies second-source precursors and susceptor hardware, since single-source dependencies on MOCVD consumables are a production risk the fab cannot carry.

What you will achieve

• Deliver epi recipes with thickness uniformity below 1.5 percent and doping control within 10 percent of target across the wafer, sustained across hundreds of production runs and multiple source changes.
• Reduce epi defect density including pits and stacking faults by 30 percent through growth-condition optimization on temperature, pressure, precursor flows, and V/III ratio.
• Drive reactor-to-reactor matching so production can flex across tools without requalification delays, with matching criteria defined, monitored routinely, and re-verified after every major PM.
• Own in-situ monitoring and post-growth characterization, catching growth anomalies before wafers ship downstream where they become expensive scrap, protecting downstream cycle time and material cost.
• Cut growth recipe development time by 25 percent using designed experiments instead of sequential tweaking, reaching qualified recipes with fewer growth runs and less precursor consumption per development cycle.

What you will bring

Must-haves

• BS or MS in materials science, physics, chemistry, or electrical engineering.
• 2 to 5 years with MOCVD or MBE epitaxial growth in a production or development environment with recipe ownership.
• Understanding of epitaxial growth kinetics, doping incorporation mechanisms, and defect formation and propagation.
• Experience with XRD, AFM, or photoluminescence for epi characterization, connecting measurements back to growth conditions with quantitative correlations that guide the next growth experiment.
• Hands-on reactor operation including maintenance and source handling safety, with respect for the hazards of metalorganic precursors.
• Strong data analysis skills for correlating growth parameters to film properties across large experimental datasets.

Nice-to-haves

• Experience with wide-bandgap materials such as GaN or SiC, or with III-V compound growth.
• Knowledge of in-situ reflectance or curvature monitoring for real-time growth control.
• Familiarity with selective epitaxy techniques for advanced device structures.